Department of the Army April 27, 2012 – Federal Register Recent Federal Regulation Documents

In compliance with 35 U.S.C. 209(e) and 37 CFR 404.7(a)(1)(i), the Department of the Army hereby gives notice of its intent to grant to TroCept Micro Ltd. L.L.C., a corporation having its principle place of business at 2711 Centerville Rd, Suite 400, Wilmington, DE 19808, exclusive licenses relative to the following U.S. Patents: 6,501,099; ``Modified-anode gate turn-off thyristor;'' December 31, 2002. 6,703,642; ``Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state;'' March 9, 2004. 6,734,462; ``Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state,'' February 8, 2000. 6,759,683; ``Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications;'' July 6, 2004. 6,900,477; ``Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture;'' May 31, 2005. 7,297,626; ``Process for nickel silicide Ohmic contacts to n-SiC;'' November 20, 2007. 7,304,363; ``Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device;'' December 4, 2007. 7,851,274; ``Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor;'' December 14, 2010.