Notice of Intent To Grant Exclusive Patent Licenses to TroCept Micro Ltd. L.L.C., 25151 [2012-10169]

Download as PDF Federal Register / Vol. 77, No. 82 / Friday, April 27, 2012 / Notices Working Group with industry and government participation. The GPS Satellite Simulator Working Group is open to any current manufacturer of GPS constellation satellite simulators who supply products to the Department of Defense. Please note that participants must possess a SECRET clearance to attend. FOR FURTHER INFORMATION CONTACT: We request that you register for this event no later than 8 May 2012. Please send the registration to justin.deifel@losangeles.af.mil and wayne.urubio@losangeles.af.mil and provide your name, organization, telephone number, address and security clearance information. Henry Williams Jr, Acting Air Force Federal Register Liaison Officer, DAF. [FR Doc. 2012–10148 Filed 4–26–12; 8:45 am] BILLING CODE 5001–10–P DEPARTMENT OF DEFENSE Department of the Army Notice of Intent To Grant Exclusive Patent Licenses to TroCept Micro Ltd. L.L.C. Department of the Army, DoD. Notice of intent. AGENCY: ACTION: In compliance with 35 U.S.C. 209(e) and 37 CFR 404.7(a)(1)(i), the Department of the Army hereby gives notice of its intent to grant to TroCept Micro Ltd. L.L.C., a corporation having its principle place of business at 2711 Centerville Rd, Suite 400, Wilmington, DE 19808, exclusive licenses relative to the following U.S. Patents: • 6,501,099; ‘‘Modified-anode gate turn-off thyristor;’’ December 31, 2002. • 6,703,642; ‘‘Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state;’’ March 9, 2004. • 6,734,462; ‘‘Silicon carbide (SiC) gate turn-off (GTO) thyristor structure for higher turn-off gain and larger voltage blocking when in the off-state,’’ February 8, 2000. • 6,759,683; ‘‘Formulation and fabrication of an improved Ni based composite Ohmic contact to n-SiC for high temperature and high power device applications;’’ July 6, 2004. • 6,900,477; ‘‘Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor and an article of manufacture;’’ May 31, 2005. • 7,297,626; ‘‘Process for nickel silicide Ohmic contacts to n-SiC;’’ November 20, 2007. mstockstill on DSK4VPTVN1PROD with NOTICES SUMMARY: VerDate Mar<15>2010 17:44 Apr 26, 2012 Jkt 226001 • 7,304,363; ‘‘Interacting current spreader and junction extender to increase the voltage blocked in the off state of a high power semiconductor device;’’ December 4, 2007. • 7,851,274; ‘‘Processing technique to improve the turn-off gain of a silicon carbide gate turn-off thyristor;’’ December 14, 2010. DATES: The prospective exclusive licenses may be granted unless within fifteen (15) days from the date of this published notice, the U.S. Army Research Laboratory receives written objections including evidence and argument that establish that the grant of the licenses would not be consistent with the requirements of 35 U.S.C. 209 and 37 CFR 404.7. Competing applications completed and received by the U.S. Army Research Laboratory within fifteen (15) days from the date of this published notice will also be treated as objections to the grant of the contemplated exclusive licenses. Objections submitted in response to this notice will not be made available to the public for inspection and, to the extent permitted by law, will not be released under the Freedom of Information Act, 5 U.S.C. 552. ADDRESSES: Send written objections to Michael D. Rausa, U.S. Army Research Laboratory, Office of Research and Technology Applications, Attn: RDRL– DB/Bldg. 434, Aberdeen Proving Ground, MD 21005–5425. FOR FURTHER INFORMATION CONTACT: Michael D. Rausa, telephone (410) 278– 5028. SUPPLEMENTARY INFORMATION: None. Brenda S. Bowen, Army Federal Register Liaison Officer. [FR Doc. 2012–10169 Filed 4–26–12; 8:45 am] BILLING CODE 3710–08–P DEPARTMENT OF DEFENSE Department of the Army, Corps of Engineers Notice of Availability for the Draft Supplemental Environmental Impact Statement for the Proposed San Acacia to Bosque del Apache Project, Socorro County, NM Department of the Army, U.S. Army Corps of Engineers, DoD. ACTION: Notice of availability. AGENCY: The Albuquerque District, U.S. Army Corps of Engineers (Corps) has prepared a draft Supplemental Environmental Impact Statement (SEIS) on the findings of a flood risk management study along the Rio Grande SUMMARY: PO 00000 Frm 00031 Fmt 4703 Sfmt 4703 25151 from San Acacia downstream to San Marcial in Socorro County, New Mexico. The recommended plan is to replace the existing embankment between the Low Flow Conveyance Channel and the Rio Grande with a structurally competent levee capable of containing high-volume, long-duration flows. This engineered levee would substantially reduce the risk of damage from floods emanating from the Rio Grande. The local cost-sharing sponsors of the proposed project are the Middle Rio Grande Conservancy District and the New Mexico Interstate Stream Commission. All comments must be submitted or postmarked no later June 11, 2012. ADDRESSES: Comments, questions, requests for copies of the draft SEIS, and requests for notification of the public meeting can be addressed to: William DeRagon, email: william.r.deragon@usace.army.mil; or Mark Doles, email: mark.w.doles@usace,army.mil; U.S. Army Corps of Engineers, 4101 Jefferson Plaza NE., Albuquerque, New Mexico 87109. DATES: Mr. William DeRagon, telephone: (505) 342– 3358; or Mark Doles, telephone: (505) 342–3364. SUPPLEMENTARY INFORMATION: Previously, an environmental impact statement (1992) and a supplement (1977) were published regarding this project. Currently, a new draft SEIS has been prepared to evaluate effects of revised levee design and additional alternatives. The draft SEIS is integrated with a draft General Reevaluation Report, and the integrated document is entitled: Draft General Reevaluation Report and Supplemental Environmental Impact Statement II: Rio Grande Floodway, San Acacia to Bosque del Apache Unit, Socorro County, New Mexico (hereafter referred to as the draft GRR/SEIS–II). Alternatives developed and evaluated during the current and previous studies consist of levee reconstruction; flood and sediment control dams; local levees; intermittent levee replacement; watershed land treatment; floodproofing of buildings; levee-alignment setbacks; and no action. Issues analyzed in the development of the draft GRR/SEIS–II included the effect of alternatives on flood risk, developed lands and structures, water quality, ecological resources, endangered species, social welfare, cultural resources, and aesthetic qualities. Public Review: The 45-day long review public review period for the FOR FURTHER INFORMATION CONTACT: E:\FR\FM\27APN1.SGM 27APN1

Agencies

[Federal Register Volume 77, Number 82 (Friday, April 27, 2012)]
[Notices]
[Page 25151]
From the Federal Register Online via the Government Printing Office [www.gpo.gov]
[FR Doc No: 2012-10169]


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DEPARTMENT OF DEFENSE

Department of the Army


Notice of Intent To Grant Exclusive Patent Licenses to TroCept 
Micro Ltd. L.L.C.

AGENCY: Department of the Army, DoD.

ACTION: Notice of intent.

-----------------------------------------------------------------------

SUMMARY: In compliance with 35 U.S.C. 209(e) and 37 CFR 404.7(a)(1)(i), 
the Department of the Army hereby gives notice of its intent to grant 
to TroCept Micro Ltd. L.L.C., a corporation having its principle place 
of business at 2711 Centerville Rd, Suite 400, Wilmington, DE 19808, 
exclusive licenses relative to the following U.S. Patents:
     6,501,099; ``Modified-anode gate turn-off thyristor;'' 
December 31, 2002.
     6,703,642; ``Silicon carbide (SiC) gate turn-off (GTO) 
thyristor structure for higher turn-off gain and larger voltage 
blocking when in the off-state;'' March 9, 2004.
     6,734,462; ``Silicon carbide (SiC) gate turn-off (GTO) 
thyristor structure for higher turn-off gain and larger voltage 
blocking when in the off-state,'' February 8, 2000.
     6,759,683; ``Formulation and fabrication of an improved Ni 
based composite Ohmic contact to n-SiC for high temperature and high 
power device applications;'' July 6, 2004.
     6,900,477; ``Processing technique to improve the turn-off 
gain of a silicon carbide gate turn-off thyristor and an article of 
manufacture;'' May 31, 2005.
     7,297,626; ``Process for nickel silicide Ohmic contacts to 
n-SiC;'' November 20, 2007.
     7,304,363; ``Interacting current spreader and junction 
extender to increase the voltage blocked in the off state of a high 
power semiconductor device;'' December 4, 2007.
     7,851,274; ``Processing technique to improve the turn-off 
gain of a silicon carbide gate turn-off thyristor;'' December 14, 2010.

DATES: The prospective exclusive licenses may be granted unless within 
fifteen (15) days from the date of this published notice, the U.S. Army 
Research Laboratory receives written objections including evidence and 
argument that establish that the grant of the licenses would not be 
consistent with the requirements of 35 U.S.C. 209 and 37 CFR 404.7. 
Competing applications completed and received by the U.S. Army Research 
Laboratory within fifteen (15) days from the date of this published 
notice will also be treated as objections to the grant of the 
contemplated exclusive licenses.
    Objections submitted in response to this notice will not be made 
available to the public for inspection and, to the extent permitted by 
law, will not be released under the Freedom of Information Act, 5 
U.S.C. 552.

ADDRESSES: Send written objections to Michael D. Rausa, U.S. Army 
Research Laboratory, Office of Research and Technology Applications, 
Attn: RDRL-DB/Bldg. 434, Aberdeen Proving Ground, MD 21005-5425.

FOR FURTHER INFORMATION CONTACT: Michael D. Rausa, telephone (410) 278-
5028.

SUPPLEMENTARY INFORMATION: None.

Brenda S. Bowen,
Army Federal Register Liaison Officer.
[FR Doc. 2012-10169 Filed 4-26-12; 8:45 am]
BILLING CODE 3710-08-P

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