Department of Defense January 16, 2018 – Federal Register Recent Federal Regulation Documents

The inventions listed below are assigned to the United States (U.S.) Government as represented by the Secretary of the Army and are available for licensing by the Department of the Army (DoA): U.S. Patent Number 7,812,366 entitled ``Ultraviolet Light Emitting AlGaN Composition, and Ultraviolet Light Emitting Device Containing Same'', Inventors Sampath et al., Issue date October 12, 2010. U.S. Patent Number 8,564,014 entitled ``Ultraviolet Light Emitting AlGaN Composition and Ultraviolet Light Emitting Device Containing Same'', Inventors Sampath et al., Issue date October 22, 2013. U.S. Patent 7,498,182 entitled ``Method of Manufacturing an AlGaN Composition and Ultraviolet Light Emitting Device Containing Same'', Inventors Sampath et al., Issue Date March 3, 2009. The novel claims of these patents are not specific to the growth method used in the production of Ultraviolet (UV) Light Emitting Diodes (LEDs) and apply to any Aluminum Gallium Nitride (AlGaN) composition containing self-assembled nanometer-scale compositional inhomogeneities that are localized in more than one dimension, and includes wells, dots, and wires. These patents are relevant to a large portion of semiconductor UV LED industry, which employ some degree of nanoscale compositional inhomogeneity to enhance ultraviolet light emission, regardless of growth method. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.