Notice of Availability of Government-Owned Inventions; Available for Licensing, 2147 [2018-00609]
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Federal Register / Vol. 83, No. 10 / Tuesday, January 16, 2018 / Notices
Dated: January 10, 2018.
Angela Somma,
Chief, Endangered Species Division, Office
of Protected Resources, National Marine
Fisheries Service.
[FR Doc. 2018–00602 Filed 1–12–18; 8:45 am]
BILLING CODE 3510–22–P
DEPARTMENT OF DEFENSE
Department of the Army
Notice of Availability of GovernmentOwned Inventions; Available for
Licensing
AGENCY:
ACTION:
Department of the Army, DoD.
Notice.
The inventions listed below
are assigned to the United States (U.S.)
Government as represented by the
Secretary of the Army and are available
for licensing by the Department of the
Army (DoA):
• U.S. Patent Number 7,812,366
entitled ‘‘Ultraviolet Light Emitting
AlGaN Composition, and Ultraviolet
Light Emitting Device Containing
Same’’, Inventors Sampath et al., Issue
date October 12, 2010.
• U.S. Patent Number 8,564,014
entitled ‘‘Ultraviolet Light Emitting
AlGaN Composition and Ultraviolet
Light Emitting Device Containing
Same’’, Inventors Sampath et al., Issue
date October 22, 2013.
• U.S. Patent 7,498,182 entitled
‘‘Method of Manufacturing an AlGaN
Composition and Ultraviolet Light
Emitting Device Containing Same’’,
Inventors Sampath et al., Issue Date
March 3, 2009.
The novel claims of these patents are
not specific to the growth method used
in the production of Ultraviolet (UV)
Light Emitting Diodes (LEDs) and apply
to any Aluminum Gallium Nitride
(AlGaN) composition containing selfassembled nanometer-scale
compositional inhomogeneities that are
localized in more than one dimension,
and includes wells, dots, and wires.
These patents are relevant to a large
portion of semiconductor UV LED
industry, which employ some degree of
nanoscale compositional inhomogeneity
to enhance ultraviolet light emission,
regardless of growth method. Further, a
semiconductor UV light emitting device
having an active region layer comprised
of the AlGaN composition is provided,
as well as a method of producing the
AlGaN composition and semiconductor
UV light emitting device, involving
molecular beam epitaxy.
daltland on DSKBBV9HB2PROD with NOTICES
SUMMARY:
VerDate Sep<11>2014
22:48 Jan 12, 2018
Jkt 244001
Request for supplemental
information should be made prior to
March 31, 2018.
ADDRESSES: Request for supplemental
information, including licensing
application packages and procedures
should be directed to John Millemaci,
301–645–6637, jmillemaci@etcmd.com,
Energetics Technology Center (ETC),
4185 Indian Head Highway, Indian
Head, MD 20640.
FOR FURTHER INFORMATION CONTACT: U.S.
Army Research Laboratory Technology
Transfer Office, RDRL–DPP/Thomas
Mulkern, Building 321 Room 110,
Aberdeen Proving Ground, MD 21005–
5425. Phone: (410) 278–0889, Email:
ORTA@arl.army.mil.
SUPPLEMENTARY INFORMATION: The U.S.
Army intends to move expeditiously to
license these inventions. Licensing
application packages are available from
ETC and all applications and
commercialization plans must be
returned to ETC by May 1, 2018. ETC is
an authorized Department of Defense
Partnership Intermediary per Authority
15 U.S.C. 3715. ETC will turn over all
completed applications to the U.S.
Army for evaluation by May 28, 2017,
with final negotiations and awards
occurring during the months of June and
July, 2018. The U.S. Army will consider
requests for nonexclusive, partially
exclusive, and fully exclusive licenses
in the U.S. and may prefer to grant an
exclusive license to a company capable
of broad commercialization as well as
patent maintenance and enforcement
within the U.S.
The DoA intends to ensure that its
licensed inventions are broadly
commercialized throughout the United
States.
DATES:
Brenda S. Bowen,
Army Federal Register Liaison Officer.
[FR Doc. 2018–00609 Filed 1–12–18; 8:45 am]
BILLING CODE 5001–03–P
DEPARTMENT OF DEFENSE
Department of the Army
Advisory Committee on Arlington
National Cemetery, Honor
Subcommittee; Meeting Notice
Department of the Army, DoD.
Notice of open subcommittee
meeting.
AGENCY:
ACTION:
The Department of the Army
is publishing this notice to announce
the following Federal advisory
subcommittee meeting of the Honor
subcommittee of the Advisory
Committee on Arlington National
SUMMARY:
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2147
Cemetery (ACANC). This meeting is
open to the public. For more
information about the Committee and
the Subcommittees, please visit: https://
www.arlingtoncemetery.mil/About/
Advisory-Committee-on-ArlingtonNational-Cemetery/ACANC-Meetings.
DATES: The Honor subcommittee will
meet on Tuesday, January 30, 2018 from
9:00 a.m. to 12:00 p.m.
ADDRESSES: The Honor Subcommittee
will meet in the Stars Conference Room,
Sheraton Pentagon City Hotel, 900 S.
Orme St., Arlington, VA 22204.
FOR FURTHER INFORMATION CONTACT: Mr.
Timothy Keating; Alternate Designated
Federal Officer for the subcommittees,
in writing at Arlington National
Cemetery, Arlington VA 22211, or by
email at timothy.p.keating.civ@mail.mil,
or by phone at 1–877–907–8585.
SUPPLEMENTARY INFORMATION: This
subcommittee meeting is being held
under the provisions of the Federal
Advisory Committee Act of 1972 (5
U.S.C., Appendix, as amended), the
Sunshine in the Government Act of
1976 (U.S.C. 552b, as amended) and 41
Code of the Federal Regulations (CFR
102–3.150).
Purpose of the Meetings: The
Advisory Committee on Arlington
National Cemetery is an independent
Federal advisory committee chartered to
provide the Secretary of the Army
independent advice and
recommendations on Arlington National
Cemetery, including, but not limited to,
cemetery administration, the erection of
memorials at the cemetery, and master
planning for the cemetery. The
Secretary of the Army may act on the
committee’s advice and
recommendations. The primary purpose
of the Honor subcommittee is to
accomplish an independent assessment
of methods to address the long-term
future of the Army national cemeteries,
including how best to extend the active
burials and what ANC should focus on
once all available space is used.
Agenda: The Honor subcommittee
will receive an update on the results of
a national dialogue public survey
conducted as a result of Public Law
114–158. The subcommittee will
subsequently conduct a roundtable
discussion with visiting guests and
study suggestions in consideration of a
second survey. The subcommittee will
then report its deliberations and
findings to the full committee.
Public’s Accessibility to the Meeting:
Pursuant to 5 U.S.C. 552b and 41 CFR
102–3.140 through 102–3.165, and the
availability of space, this meeting is
open to the public. Seating is on a firstcome basis. The Stars Conference room
E:\FR\FM\16JAN1.SGM
16JAN1
Agencies
[Federal Register Volume 83, Number 10 (Tuesday, January 16, 2018)]
[Notices]
[Page 2147]
From the Federal Register Online via the Government Publishing Office [www.gpo.gov]
[FR Doc No: 2018-00609]
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DEPARTMENT OF DEFENSE
Department of the Army
Notice of Availability of Government-Owned Inventions; Available
for Licensing
AGENCY: Department of the Army, DoD.
ACTION: Notice.
-----------------------------------------------------------------------
SUMMARY: The inventions listed below are assigned to the United States
(U.S.) Government as represented by the Secretary of the Army and are
available for licensing by the Department of the Army (DoA):
U.S. Patent Number 7,812,366 entitled ``Ultraviolet Light
Emitting AlGaN Composition, and Ultraviolet Light Emitting Device
Containing Same'', Inventors Sampath et al., Issue date October 12,
2010.
U.S. Patent Number 8,564,014 entitled ``Ultraviolet Light
Emitting AlGaN Composition and Ultraviolet Light Emitting Device
Containing Same'', Inventors Sampath et al., Issue date October 22,
2013.
U.S. Patent 7,498,182 entitled ``Method of Manufacturing
an AlGaN Composition and Ultraviolet Light Emitting Device Containing
Same'', Inventors Sampath et al., Issue Date March 3, 2009.
The novel claims of these patents are not specific to the growth
method used in the production of Ultraviolet (UV) Light Emitting Diodes
(LEDs) and apply to any Aluminum Gallium Nitride (AlGaN) composition
containing self-assembled nanometer-scale compositional inhomogeneities
that are localized in more than one dimension, and includes wells,
dots, and wires. These patents are relevant to a large portion of
semiconductor UV LED industry, which employ some degree of nanoscale
compositional inhomogeneity to enhance ultraviolet light emission,
regardless of growth method. Further, a semiconductor UV light emitting
device having an active region layer comprised of the AlGaN composition
is provided, as well as a method of producing the AlGaN composition and
semiconductor UV light emitting device, involving molecular beam
epitaxy.
DATES: Request for supplemental information should be made prior to
March 31, 2018.
ADDRESSES: Request for supplemental information, including licensing
application packages and procedures should be directed to John
Millemaci, 301-645-6637, [email protected], Energetics Technology
Center (ETC), 4185 Indian Head Highway, Indian Head, MD 20640.
FOR FURTHER INFORMATION CONTACT: U.S. Army Research Laboratory
Technology Transfer Office, RDRL-DPP/Thomas Mulkern, Building 321 Room
110, Aberdeen Proving Ground, MD 21005-5425. Phone: (410) 278-0889,
Email: [email protected].
SUPPLEMENTARY INFORMATION: The U.S. Army intends to move expeditiously
to license these inventions. Licensing application packages are
available from ETC and all applications and commercialization plans
must be returned to ETC by May 1, 2018. ETC is an authorized Department
of Defense Partnership Intermediary per Authority 15 U.S.C. 3715. ETC
will turn over all completed applications to the U.S. Army for
evaluation by May 28, 2017, with final negotiations and awards
occurring during the months of June and July, 2018. The U.S. Army will
consider requests for nonexclusive, partially exclusive, and fully
exclusive licenses in the U.S. and may prefer to grant an exclusive
license to a company capable of broad commercialization as well as
patent maintenance and enforcement within the U.S.
The DoA intends to ensure that its licensed inventions are broadly
commercialized throughout the United States.
Brenda S. Bowen,
Army Federal Register Liaison Officer.
[FR Doc. 2018-00609 Filed 1-12-18; 8:45 am]
BILLING CODE 5001-03-P