Department of the Army January 2018 – Federal Register Recent Federal Regulation Documents
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Submission for OMB Review; Comment Request
The Department of Defense has submitted to OMB for clearance, the following proposal for collection of information under the provisions of the Paperwork Reduction Act.
Surplus Properties; Notice
This amended notice provides information regarding the properties that have been determined surplus to the requirements of the United States in accordance with the Defense Base Closure and Realignment Act of 1990, Public Law 101-510, as amended, and following screening with Federal agencies and Department of Defense components. This Notice amends the Notice published in the Federal Register on June 25, 1996.
Notice of Availability of Government-Owned Inventions; Available for Licensing
The inventions listed below are assigned to the United States (U.S.) Government as represented by the Secretary of the Army and are available for licensing by the Department of the Army (DoA): U.S. Patent Number 7,812,366 entitled ``Ultraviolet Light Emitting AlGaN Composition, and Ultraviolet Light Emitting Device Containing Same'', Inventors Sampath et al., Issue date October 12, 2010. U.S. Patent Number 8,564,014 entitled ``Ultraviolet Light Emitting AlGaN Composition and Ultraviolet Light Emitting Device Containing Same'', Inventors Sampath et al., Issue date October 22, 2013. U.S. Patent 7,498,182 entitled ``Method of Manufacturing an AlGaN Composition and Ultraviolet Light Emitting Device Containing Same'', Inventors Sampath et al., Issue Date March 3, 2009. The novel claims of these patents are not specific to the growth method used in the production of Ultraviolet (UV) Light Emitting Diodes (LEDs) and apply to any Aluminum Gallium Nitride (AlGaN) composition containing self-assembled nanometer-scale compositional inhomogeneities that are localized in more than one dimension, and includes wells, dots, and wires. These patents are relevant to a large portion of semiconductor UV LED industry, which employ some degree of nanoscale compositional inhomogeneity to enhance ultraviolet light emission, regardless of growth method. Further, a semiconductor UV light emitting device having an active region layer comprised of the AlGaN composition is provided, as well as a method of producing the AlGaN composition and semiconductor UV light emitting device, involving molecular beam epitaxy.
Advisory Committee on Arlington National Cemetery, Honor Subcommittee; Meeting Notice
The Department of the Army is publishing this notice to announce the following Federal advisory subcommittee meeting of the Honor subcommittee of the Advisory Committee on Arlington National Cemetery (ACANC). This meeting is open to the public. For more information about the Committee and the Subcommittees, please visit: https://www.arlingtoncemetery.mil/About/Advisory-Committee-on- Arlington- National-Cemetery/ACANC-Meetings.
Lake Eufaula Advisory Committee Meeting Notice
The Department of the Army is publishing this notice to announce the following Federal advisory committee meeting of the Lake Eufaula Advisory Committee (LEAC). The meeting is open to the public.
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