National Aeronautics and Space Administration December 31, 2015 – Federal Register Recent Federal Regulation Documents

This notice is issued in accordance with 35 U.S.C. 209(e) and 37 CFR 404.7(a)(1)(i). NASA hereby gives notice of its intent to grant an exclusive license in the United States to practice the inventions described and claimed in U.S. Patent No. 7,341,883 titled ``Silicon Germanium Semiconductive Alloy and Method Of Fabricating Same,'' NASA Case No. LAR-16868-1; U.S. Patent No. 7,514,726 titled ``Graded Index Silicon Germanium on Lattice Matched Silicon Germanium Semiconductive Alloy,'' NASA Case No. LAR-16872-1; U.S. Patent No. 7,558,371 titled ``Method of Generating X-Ray Diffraction Data for Integral Detection of Twin Defects in Super-Hetero-Epitaxial Materials,'' NASA Case No. LAR- 17044-1; U.S. Patent No, 7,906,358 titled ``Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal,'' NASA Case No. LAR-17185-1; U.S. Patent No. 8,226,767 titled ``Hybrid Bandgap Engineering for Super-Hetero- Epitaxial Semiconductor Materials, and Products Thereof,'' NASA Case No. LAR-17405-1; U.S. Patent No. 8,257,491 titled ``Rhombohedral Cubic Semiconductor Materials on Trigonal Substrate with Single Crystal Properties and Devices Based on Such Materials,'' NASA Case No. LAR- 17553-1; U.S. Patent No. 7,769,135 titled ``X-ray Diffraction Wafer Mapping Method for Rhombohedral Super-Hetero-Epitaxy,'' NASA Case No. LAR-17554-1; U.S. Patent Application No. 14/202,699 titled ``High Mobility Transport Layer Structures for Rhombohedral Si/Ge/SiGe Devices,'' NASA Case No. LAR-17841-1; U.S. Patent Application No. 14/ 204,535 titled ``Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure,'' NASA Case No. LAR-17922-1; U.S. Patent No. 8,044,294 titled ``Thermoelectric Materials and Devices,'' NASA Case No. LAR- 17381-1; and U.S. Patent Application No. 14/279,614 titled ``Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure,'' NASA Case No. LAR-18133-1, to innoScience, Inc., having its principal place of business in Gaithersburg, Maryland. Certain patent rights in these inventions have been assigned to the United States of America as represented by the Administrator of the National Aeronautics and Space Administration. The prospective exclusive license will comply with the terms and conditions of 35 U.S.C. 209 and 37 CFR 404.7.

DoD, GSA, and NASA are issuing a final rule amending the Federal Acquisition Regulation (FAR) to incorporate revised thresholds for application of the World Trade Organization (WTO) Government Procurement Agreement (GPA) and the Free Trade Agreements (FTAs), as determined by the United States Trade Representative.

DoD, GSA, and NASA are issuing an interim rule amending the Federal Acquisition Regulation (FAR) to implement regulatory changes made by the Small Business Administration (SBA) that provide for authority to award sole source contracts to economically disadvantaged women-owned small business concerns and to women-owned small business concerns eligible under the Women-Owned Small Business (WOSB) Program.

This document summarizes the Federal Acquisition Regulation (FAR) rules agreed to by the Civilian Agency Acquisition Council and the Defense Acquisition Regulations Council (Councils) in this Federal Acquisition Circular (FAC) 2005-86. A companion document, the Small Entity Compliance Guide (SECG), follows this FAC. The FAC, including the SECG, is available via the Internet at https://www.regulations.gov.