Notice of Inventions Available for Licensing, 15738 [E8-6029]

Download as PDF 15738 Federal Register / Vol. 73, No. 58 / Tuesday, March 25, 2008 / Notices mstockstill on PROD1PC66 with NOTICES • Timeliness of the company’s completed application, participation agreement, and payment of the mission participation fee; • Certification that the company’s products and/or services are manufactured or produced in the United States or, if manufactured/produced outside of the United States, the products/services must be marketed under the name of a U.S. firm and have U.S. content representing at least 51 percent of the value of the finished goods or services; • Diversity of health-care sectors represented; and • Rank/seniority of the designated company representative. Any partisan political activities of an applicant, including political contributions, will be entirely irrelevant to the selection process. The mission will be promoted through the following venues: ITA’s Export Assistance Centers, the Health and Consumer Goods team, the Service Industries team, the Asia Pacific Team, the Trade Events List http:// www.export.gov; the Federal Register; relevant trade associations; past Commerce health-care policy event participants; and the Commerce Department trade missions calendar: http://www.ita.doc.gov/doctm/ tmcal.html. Recruitment will begin immediately and will close on April 1, 2007. The trade mission participation fee will be U.S. $1,250 per company. Each participating organization will be allowed to send only one representative. The participation fee does not include the cost of travel, lodging, some ground transportation, or some meals. Participation is open to 15 qualified U.S. companies. Invited companies must submit the trade mission participation fee and completed participation agreement within one week of receipt of their invitation in order to secure their place in the mission. After that time, other companies may be invited to fill that spot. Applications received after the closing date will be considered only if space and scheduling constraints permit. FOR FURTHER INFORMATION CONTACT: Anthony Cino, U.S. Department of Commerce, e-mail: anthony_cino@ita.doc.gov, telephone: VerDate Aug<31>2005 18:33 Mar 24, 2008 Jkt 214001 202–482–5679, facsimile: 202–482– 2266. Anthony Cino, Office of the Chinese Economic Area, International Trade Administration, U.S. Department of Commerce. [FR Doc. E8–5935 Filed 3–24–08; 8:45 am] BILLING CODE 3510–25–P DEPARTMENT OF COMMERCE National Institute of Standards and Technology Notice of Inventions Available for Licensing National Institute of Standards and Technology, Commerce. ACTION: Notice of inventions available for licensing. AGENCY: SUMMARY: The inventions listed below are owned in whole or in part by the U.S. Government, as represented by the Secretary of Commerce. The U.S. Government’s interest in these inventions is available for licensing in accordance with 35 U.S.C. 207 and 37 CFR part 404 to achieve expeditious commercialization of results of federally funded research and development. FOR FURTHER INFORMATION CONTACT: Technical and licensing information on these inventions may be obtained by writing to: National Institute of Standards and Technology, Office of Technology Partnerships, Attn: Mary Clague, Building 222, Room A155, Gaithersburg, MD 20899. Information is also available via telephone: 301–975– 4188, fax 301–975–3482, or e-mail: mary.clague@nist.gov. Any request for information should include the NIST Docket number and title for the invention as indicated below. SUPPLEMENTARY INFORMATION: NIST may enter into a Cooperative Research and Development Agreement (‘‘CRADA’’) with the licensee to perform further research on the invention for purposes of commercialization. The inventions available for licensing are: [NIST DOCKET NUMBER: 7–003] Title: Highly Charged Ion Modified Oxides (HCIMO) for Tunable Resistance. Abstract: Highly Charged Ion Modified Oxides (HCIMO) are achieved by irradiating a thin, high resistance oxide with highly charged ions (HCIs) and then depositing a conducting material of choice on top the irradiated oxide. The irradiation by HCIs preferentially ablates a region on the order of a cubic nanometer at each HCI’s impact site breaking a hole through the ultra-thin oxide. This is demonstrated PO 00000 Frm 00021 Fmt 4703 Sfmt 4703 by preparing an insulating layer of aluminum oxide on a cobalt lower electrode layer, exposing the oxide to very dilute HCI radiation, and then depositing a cobalt upper layer. The data show a clear and systematic decrease in the resistance of the multilayer devices correlated to the HCI dose at very dilute doses. The nanometer dimensions of individual HCI impacts and the precise control over the dose combine to allow high precision selection of the material’s resistance over a wide range of values, currently demonstrated over three orders of magnitude. As HCI modification only occurs within a few nanometers of the surface and generally does not affect metals, no special measures are needed to protect surrounding device structures from HCI damage. Since the size of the material modification is determined by the properties of a single ion, precise alignment is not required, only uniform illumination of the device area by the HCI beam, greatly simplifying commercial integration of HCI irradiation. [NIST DOCKET NUMBER: 7–008] Title: A Four-Wave Mixing Source of Squeezed Light for Image Processing and Interferometry Abstract: The invention provides a source of squeezed light, generated using a 4-level, four-wave mixing scheme in rubidium vapor. Strong relative-number squeezing between two beams has been demonstrated; much stronger than previously seen in any four-wave mixing system. The scheme relies on a chi(3) nonlinearity, and a single-pass, no-cavity, experimental implementation which has relaxed phase matching requirements, as compared to chi(2) crystal sources, and easily produces squeezing in multiple spatial modes. Dated: March 18, 2008. Richard F. Kayser, Acting Deputy Director. [FR Doc. E8–6029 Filed 3–24–08; 8:45 am] BILLING CODE 3510–13–P DEPARTMENT OF COMMERCE National Oceanic and Atmospheric Administration RIN 0648–XG61 Magnuson-Stevens Act Provisions; General Provisions for Domestic Fisheries; Application for Exempted Fishing Permit National Marine Fisheries Service (NMFS), National Oceanic and AGENCY: E:\FR\FM\25MRN1.SGM 25MRN1

Agencies

[Federal Register Volume 73, Number 58 (Tuesday, March 25, 2008)]
[Notices]
[Page 15738]
From the Federal Register Online via the Government Printing Office [www.gpo.gov]
[FR Doc No: E8-6029]


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DEPARTMENT OF COMMERCE

National Institute of Standards and Technology


Notice of Inventions Available for Licensing

AGENCY: National Institute of Standards and Technology, Commerce.

ACTION: Notice of inventions available for licensing.

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SUMMARY: The inventions listed below are owned in whole or in part by 
the U.S. Government, as represented by the Secretary of Commerce. The 
U.S. Government's interest in these inventions is available for 
licensing in accordance with 35 U.S.C. 207 and 37 CFR part 404 to 
achieve expeditious commercialization of results of federally funded 
research and development.

FOR FURTHER INFORMATION CONTACT: Technical and licensing information on 
these inventions may be obtained by writing to: National Institute of 
Standards and Technology, Office of Technology Partnerships, Attn: Mary 
Clague, Building 222, Room A155, Gaithersburg, MD 20899. Information is 
also available via telephone: 301-975-4188, fax 301-975-3482, or e-
mail: mary.clague@nist.gov. Any request for information should include 
the NIST Docket number and title for the invention as indicated below.

SUPPLEMENTARY INFORMATION: NIST may enter into a Cooperative Research 
and Development Agreement (``CRADA'') with the licensee to perform 
further research on the invention for purposes of commercialization. 
The inventions available for licensing are:

[NIST DOCKET NUMBER: 7-003]

    Title: Highly Charged Ion Modified Oxides (HCIMO) for Tunable 
Resistance.
    Abstract: Highly Charged Ion Modified Oxides (HCIMO) are achieved 
by irradiating a thin, high resistance oxide with highly charged ions 
(HCIs) and then depositing a conducting material of choice on top the 
irradiated oxide. The irradiation by HCIs preferentially ablates a 
region on the order of a cubic nanometer at each HCI's impact site 
breaking a hole through the ultra-thin oxide. This is demonstrated by 
preparing an insulating layer of aluminum oxide on a cobalt lower 
electrode layer, exposing the oxide to very dilute HCI radiation, and 
then depositing a cobalt upper layer. The data show a clear and 
systematic decrease in the resistance of the multilayer devices 
correlated to the HCI dose at very dilute doses. The nanometer 
dimensions of individual HCI impacts and the precise control over the 
dose combine to allow high precision selection of the material's 
resistance over a wide range of values, currently demonstrated over 
three orders of magnitude. As HCI modification only occurs within a few 
nanometers of the surface and generally does not affect metals, no 
special measures are needed to protect surrounding device structures 
from HCI damage. Since the size of the material modification is 
determined by the properties of a single ion, precise alignment is not 
required, only uniform illumination of the device area by the HCI beam, 
greatly simplifying commercial integration of HCI irradiation.

[NIST DOCKET NUMBER: 7-008]

    Title: A Four-Wave Mixing Source of Squeezed Light for Image 
Processing and Interferometry
    Abstract: The invention provides a source of squeezed light, 
generated using a 4-level, four-wave mixing scheme in rubidium vapor. 
Strong relative-number squeezing between two beams has been 
demonstrated; much stronger than previously seen in any four-wave 
mixing system. The scheme relies on a chi(3) nonlinearity, and a 
single-pass, no-cavity, experimental implementation which has relaxed 
phase matching requirements, as compared to chi(2) crystal sources, and 
easily produces squeezing in multiple spatial modes.

    Dated: March 18, 2008.
Richard F. Kayser,
Acting Deputy Director.
[FR Doc. E8-6029 Filed 3-24-08; 8:45 am]
BILLING CODE 3510-13-P