Request for Information: Basic Research Initiative for Microelectronics, 33248-33250 [2019-14869]

Download as PDF 33248 Federal Register / Vol. 84, No. 134 / Friday, July 12, 2019 / Notices Topic Addressed: Independent Educational Evaluation ELECTION ASSISTANCE COMMISSION Meeting Notice Æ Letter dated August 23, 2018, to individual (personally identifiable information redacted), regarding whether a public agency may limit the amount of time an independent evaluator is allotted to observe a child in the child’s educational setting when the evaluator is paid by the parent. 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AGENCY: DATES: Monday, July 22, 2019, 3–4 p.m. (EDT). EAC Board of Advisers Quarterly Conference Call. To listen and monitor the event as an attendee 1. Go to: https://eacevents. webex.com/eacevents/onstage/ g.php?MTID;=e48265b08291ba 48341776d381acc002d. 2. Click ‘‘Join Now’’. To join the audio conference only: 1. To receive a call back, provide your phone number when you join the event, or 2. call the number below and enter the access code. US TOLL FREE: +1–855–892–3345 US TOLL: +1–415–527–5035 Access code: 909 320 921 (See toll-free dialing restrictions at https://www.webex.com/pdf/tollfree_ restrictions.pdf) For assistance: contact the host, Steve Uyak, suyak@eac.gov. Purpose: In accordance with the Federal Advisory Committee Act (FACA), Public Law 92–463, as amended (5 U.S.C. Appendix 2), the U.S. Election Assistance Commission (EAC) Board of Advisors will conduct a conference call to discuss current EAC activities. 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Tatum, General Counsel, U.S. Election Assistance Commission. [FR Doc. 2019–14804 Filed 7–11–19; 8:45 am] BILLING CODE 6820–KF–P DEPARTMENT OF ENERGY Request for Information: Basic Research Initiative for Microelectronics Offices of Advanced Scientific Computing Research (ASCR), Basic Energy Sciences (BES), Fusion Energy Science (FES), and High Energy Physics (HEP); Office of Science, Department of Energy (DOE). ACTION: Request for information (RFI). AGENCY: The DOE Office of Science (DOE–SC) is considering the launch of a multi-program basic research initiative in support of microelectronics and semiconductor sectors. The participating program offices in DOE– SC invite interested parties to provide input on the topical areas, innovation mechanisms, impact, and potential collaborations, including public-private partnerships, that could be implemented under this initiative. DOE–SC is particularly interested in ways in which unique DOE facilities, expertise and capabilities can be leveraged to support U.S. continued global innovation and leadership in this field. DATES: Written comments and information are requested on or before August 30, 2019. ADDRESSES: The DOE Office of Science is using the http://www.regulations.gov system for the submission and posting of public comments in this proceeding. All comments in response to this RFI are therefore to be submitted electronically through http:// www.regulations.gov, via the web form accessed by following the ‘‘Submit a Formal Comment’’ link near the top right of the Federal Register web page for this RFI. FOR FURTHER INFORMATION CONTACT: Requests for additional information may be submitted to Dr. Andrew Schwartz, (301) 903–3535, Microelectronics@ science.doe.gov. SUMMARY: For decades DOE–SC has been at the leading edge of microelectronics and semiconductor-based technology innovations, both as a consumer and as an engine of scientific understanding that has enabled many of the SUPPLEMENTARY INFORMATION: E:\FR\FM\12JYN1.SGM 12JYN1 jbell on DSK3GLQ082PROD with NOTICES Federal Register / Vol. 84, No. 134 / Friday, July 12, 2019 / Notices technological breakthroughs adopted by industry. Since the invention of the integrated circuit in 1960, advances in microelectronics have followed Moore’s Law and other scaling laws, leading to circuit density and device performance improvements of 109 over this time period. In turn, strong commercial demand fueled the pace of scaling, and assured that the needs of DOE–SC facilities were met. Today, the end of Moore’s Law, along with the emergence of new computing workloads, new materials and devices, and new models of computation, have resulted in an unprecedented need and opportunity to ‘‘redesign’’ the innovation process. As highlighted in the SC-sponsored Basic Research Needs for Microelectronics workshop,1 to enable continued advances in computing and power technologies, a fundamental rethinking is needed of the science behind the materials and chemistry, physics, synthesis and fabrication technologies, architectures, algorithms, modeling, simulation, and design software tools. Could we replace the historical roadmaps with co-design collaborations among software developers, computer architects, circuit designers, device physicists, materials scientists, and chemists to guide a new R&D strategy? The outcome of such an ‘‘end-to-end co-design framework’’ could fundamentally reshape future high performance computing, sensing, data analytics, artificial intelligence, power conversion and control, and other electronics-intensive applications. DOE–SC supports robust basic research portfolios and scientific user facilities for chemical, physical, mathematical, computational sciences, and modeling/simulation. DOE–SC is poised at the convergence of these scientific disciplines, in a unique position to play a critical role in the advancement of microelectronic technologies over the coming decades. In addition, the success and impact of DOE–SC facilities (e.g. highperformance computers, x-ray and neutron scattering centers, and high energy physics experiments) will be dependent upon the resultant capabilities in computing, sensing, power, and communications. DOE–SC is considering the launch of a basic research Microelectronics R&D initiative with emphasis on the following broad areas: • Materials, chemistry, surface science, and plasma science/technology • Device physics and circuits 1 https://science.osti.gov/-/media/bes/pdf/reports/ 2018/Microelectronics_Brochure.pdf. VerDate Sep<11>2014 16:55 Jul 11, 2019 Jkt 247001 • Component integration, architecture, and algorithms • Next-generation tools for synthesis, fabrication, and characterization Investments in these areas will provide foundational support for U.S. leadership in key technology growth areas, including the following: • Memory and Reconfigurable Systems • Machine Learning and Artificial Intelligence • Edge Computing, Sensors, and the Internet of Things • Power Electronics, the Electricity Grid, and Cyber Physical Systems • Energy Efficiency of Computation and Packaging Request for Information: The objective of this request for information is to gather input about the topical areas, organization, impact, and potential collaborations including public-private partnerships that could be implemented under this initiative. The participating program offices of DOE–SC are specifically interested in receiving input pertaining to any of the following questions: (1) Topical Areas and Scope: Are the topics identified above appropriate? Do DOE–SC expertise and capabilities in these areas offer unique opportunities? Are there other topical areas that DOE– SC should consider including? (2) Collaboration, Partnerships, and R&D Performers: What partnership and collaboration models would be most effective in furthering microelectronics R&D in the U.S.? What mechanisms should be used to foster innovation? What types of organizations and institutions should be involved? What are the optimal roles for industry and particularly public-private partnerships in such work? What approaches or concerns with respect to intellectual property rights should be considered? (3) National Impact and Unique DOE Role and Contribution: How can DOE– SC contribute to advancement of the field in ways that are not possible with other existing or envisioned programs (supported by DOE, other Federal agencies, or non-Federal sources)? How can this initiative effectively complement and expand upon existing research programs and facilities supported by ASCR, BES, HEP, and FES? (4) Program Planning and Evaluation: What strategic planning inputs and processes might maximize the impact of the DOE–SC investments in microelectronics? How can DOE–SC best review progress and coordinate with other federal agencies funding microelectronics R&D? (5) Other: What key obstacles, impediments, or bottlenecks to progress PO 00000 Frm 00032 Fmt 4703 Sfmt 4703 33249 should be considered? Are there other factors, issues, or opportunities, not addressed by the questions above, which should be considered in the establishment of a DOE–SC microelectronics R&D initiative? The proposed initiative will focus on long-term fundamental R&D and therefore DOE is not interested in receiving input related to near-term incremental improvements to current state-of-the-art commercial CMOS technology nodes. DOE is also not interested in feedback on work that is primarily supported by other U.S. government agencies, such as Fabs and Trusted Microelectronics. DOE–SC is not announcing an intention or an interest in procuring goods and services for its use. This RFI makes no statement about the possibility that DOE–SC might issue one or more solicitations for either procurement or financial assistance activities in the future. DOE–SC seeks input about how best to create a public benefit through fostering revolutionary advances in the state of the art in this field. Comments containing references, studies, research, and other empirical data that are not widely published should include copies of the referenced materials. Note that comments will be made publicly available as submitted. Any information that may be confidential and exempt by law from public disclosure should be submitted as described below. Confidential Business Information: Pursuant to 10 CFR 1004.11, any person submitting information he or she believes to be confidential and exempt by law from public disclosure should submit via email: One copy of the document marked ‘‘confidential’’ including all the information believed to be confidential, and one copy of the document marked ‘‘non-confidential’’ with the information believed to be confidential deleted. DOE will make its own determination about the confidential status of the information and treat it according to its determination. Factors of interest to DOE when evaluating requests to treat submitted information as confidential include: (1) A description of the items, (2) whether and why such items are customarily treated as confidential within the industry, (3) whether the information is generally known by or available from other sources, (4) whether the information has previously been made available to others without obligation concerning confidentiality, (5) an explanation of the competitive injury to the submitting person which would result from public disclosure, (6) E:\FR\FM\12JYN1.SGM 12JYN1 33250 Federal Register / Vol. 84, No. 134 / Friday, July 12, 2019 / Notices when such information might lose its confidential character due to the passage of time, and (7) why disclosure of the information would be contrary to the public interest. Signed in Washington, DC, on July 3, 2019. Chris Fall, Director, Office of Science. [FR Doc. 2019–14869 Filed 7–11–19; 8:45 am] BILLING CODE 6450–01–P DEPARTMENT OF ENERGY Federal Energy Regulatory Commission jbell on DSK3GLQ082PROD with NOTICES Combined Notice of Filings #1 Take notice that the Commission received the following electric rate filings: Docket Numbers: ER15–1882–004. Applicants: PSEG Energy Resources & Trade LLC. Description: Compliance filing: Informational filing of PSEG Energy Resources & Trade to be effective 12/31/9998. Filed Date: 7/8/19. Accession Number: 20190708–5097. Comments Due: 5 p.m. ET 7/29/19. Docket Numbers: ER19–1672–001. Applicants: Southwest Power Pool, Inc. Description: Tariff Amendment: Amended Filing in ER19–1672— 1148R25 American Electric Power NITSA and NOA to be effective 4/1/ 2019. Filed Date: 7/8/19. Accession Number: 20190708–5098. Comments Due: 5 p.m. ET 7/29/19. Docket Numbers: ER19–1927–001. Applicants: Portland General Electric Company. 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Description: Reliability Penalty Cost Recovery, et al. of Southwest Power Pool, Inc. Filed Date: 7/3/19. Accession Number: 20190703–5219. Comments Due: 5 p.m. ET 7/24/19. Docket Numbers: ER19–2363–000. Applicants: Pennsylvania Electric Company, Mid-Atlantic Interstate Transmission, LLC, PJM Interconnection, L.L.C. Description: § 205(d) Rate Filing: Penelec submits Construction Agreement, Service Agreement No. 5279 to be effective 9/6/2019. Filed Date: 7/8/19. Accession Number: 20190708–5075. Comments Due: 5 p.m. ET 7/29/19. Docket Numbers: ER19–2364–000. Applicants: Midcontinent Independent System Operator, Inc., ALLETE, Inc. Description: § 205(d) Rate Filing: 2019–07–08_SA 3329 MP–GRPU T–L (Tioga) to be effective 6/12/2019. Filed Date: 7/8/19. Accession Number: 20190708–5077. Comments Due: 5 p.m. ET 7/29/19. The filings are accessible in the Commission’s eLibrary system by clicking on the links or querying the docket number. Any person desiring to intervene or protest in any of the above proceedings must file in accordance with Rules 211 and 214 of the Commission’s Regulations (18 CFR 385.211 and 385.214) on or before 5:00 p.m. Eastern time on the specified comment date. Protests may be considered, but intervention is necessary to become a party to the proceeding. eFiling is encouraged. More detailed information relating to filing requirements, interventions, protests, service, and qualifying facilities filings can be found at: http://www.ferc.gov/ docs-filing/efiling/filing-req.pdf. For other information, call (866) 208–3676 (toll free). For TTY, call (202) 502–8659. Dated: July 8, 2019. Nathaniel J. Davis, Sr., Deputy Secretary. [FR Doc. 2019–14828 Filed 7–11–19; 8:45 am] BILLING CODE 6717–01–P PO 00000 Frm 00033 Fmt 4703 Sfmt 4703 DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. ER19–2360–000] Montague Wind Power Facility, LLC; Supplemental Notice That Initial Market-Based Rate Filing Includes Request for Blanket Section 204 Authorization This is a supplemental notice in the above-referenced proceeding of Montague Wind Power Facility, LLC’s application for market-based rate authority, with an accompanying rate tariff, noting that such application includes a request for blanket authorization, under 18 CFR part 34, of future issuances of securities and assumptions of liability. Any person desiring to intervene or to protest should file with the Federal Energy Regulatory Commission, 888 First Street NE, Washington, DC 20426, in accordance with Rules 211 and 214 of the Commission’s Rules of Practice and Procedure (18 CFR 385.211 and 385.214). Anyone filing a motion to intervene or protest must serve a copy of that document on the Applicant. Notice is hereby given that the deadline for filing protests with regard to the applicant’s request for blanket authorization, under 18 CFR part 34, of future issuances of securities and assumptions of liability, is July 29, 2019. The Commission encourages electronic submission of protests and interventions in lieu of paper, using the FERC Online links at http:// www.ferc.gov. To facilitate electronic service, persons with internet access who will eFile a document and/or be listed as a contact for an intervenor must create and validate an eRegistration account using the eRegistration link. Select the eFiling link to log on and submit the intervention or protests. Persons unable to file electronically should submit an original and 5 copies of the intervention or protest to the Federal Energy Regulatory Commission, 888 First Street NE, Washington, DC 20426. The filings in the above-referenced proceeding are accessible in the Commission’s eLibrary system by clicking on the appropriate link in the above list. They are also available for electronic review in the Commission’s Public Reference Room in Washington, DC. There is an eSubscription link on the website that enables subscribers to receive email notification when a document is added to a subscribed E:\FR\FM\12JYN1.SGM 12JYN1

Agencies

[Federal Register Volume 84, Number 134 (Friday, July 12, 2019)]
[Notices]
[Pages 33248-33250]
From the Federal Register Online via the Government Publishing Office [www.gpo.gov]
[FR Doc No: 2019-14869]


=======================================================================
-----------------------------------------------------------------------

DEPARTMENT OF ENERGY


Request for Information: Basic Research Initiative for 
Microelectronics

AGENCY: Offices of Advanced Scientific Computing Research (ASCR), Basic 
Energy Sciences (BES), Fusion Energy Science (FES), and High Energy 
Physics (HEP); Office of Science, Department of Energy (DOE).

ACTION: Request for information (RFI).

-----------------------------------------------------------------------

SUMMARY: The DOE Office of Science (DOE-SC) is considering the launch 
of a multi-program basic research initiative in support of 
microelectronics and semiconductor sectors. The participating program 
offices in DOE-SC invite interested parties to provide input on the 
topical areas, innovation mechanisms, impact, and potential 
collaborations, including public-private partnerships, that could be 
implemented under this initiative. DOE-SC is particularly interested in 
ways in which unique DOE facilities, expertise and capabilities can be 
leveraged to support U.S. continued global innovation and leadership in 
this field.

DATES: Written comments and information are requested on or before 
August 30, 2019.

ADDRESSES: The DOE Office of Science is using the http://www.regulations.gov system for the submission and posting of public 
comments in this proceeding. All comments in response to this RFI are 
therefore to be submitted electronically through http://www.regulations.gov, via the web form accessed by following the 
``Submit a Formal Comment'' link near the top right of the Federal 
Register web page for this RFI.

FOR FURTHER INFORMATION CONTACT: Requests for additional information 
may be submitted to Dr. Andrew Schwartz, (301) 903-3535, 
[email protected].

SUPPLEMENTARY INFORMATION: For decades DOE-SC has been at the leading 
edge of microelectronics and semiconductor-based technology 
innovations, both as a consumer and as an engine of scientific 
understanding that has enabled many of the

[[Page 33249]]

technological breakthroughs adopted by industry. Since the invention of 
the integrated circuit in 1960, advances in microelectronics have 
followed Moore's Law and other scaling laws, leading to circuit density 
and device performance improvements of 10\9\ over this time period. In 
turn, strong commercial demand fueled the pace of scaling, and assured 
that the needs of DOE-SC facilities were met.
    Today, the end of Moore's Law, along with the emergence of new 
computing workloads, new materials and devices, and new models of 
computation, have resulted in an unprecedented need and opportunity to 
``redesign'' the innovation process. As highlighted in the SC-sponsored 
Basic Research Needs for Microelectronics workshop,\1\ to enable 
continued advances in computing and power technologies, a fundamental 
rethinking is needed of the science behind the materials and chemistry, 
physics, synthesis and fabrication technologies, architectures, 
algorithms, modeling, simulation, and design software tools. Could we 
replace the historical roadmaps with co-design collaborations among 
software developers, computer architects, circuit designers, device 
physicists, materials scientists, and chemists to guide a new R&D 
strategy? The outcome of such an ``end-to-end co-design framework'' 
could fundamentally reshape future high performance computing, sensing, 
data analytics, artificial intelligence, power conversion and control, 
and other electronics-intensive applications.
---------------------------------------------------------------------------

    \1\ https://science.osti.gov/-/media/bes/pdf/reports/2018/Microelectronics_Brochure.pdf.
---------------------------------------------------------------------------

    DOE-SC supports robust basic research portfolios and scientific 
user facilities for chemical, physical, mathematical, computational 
sciences, and modeling/simulation. DOE-SC is poised at the convergence 
of these scientific disciplines, in a unique position to play a 
critical role in the advancement of microelectronic technologies over 
the coming decades. In addition, the success and impact of DOE-SC 
facilities (e.g. high-performance computers, x-ray and neutron 
scattering centers, and high energy physics experiments) will be 
dependent upon the resultant capabilities in computing, sensing, power, 
and communications.
    DOE-SC is considering the launch of a basic research 
Microelectronics R&D initiative with emphasis on the following broad 
areas:

 Materials, chemistry, surface science, and plasma science/
technology
 Device physics and circuits
 Component integration, architecture, and algorithms
 Next-generation tools for synthesis, fabrication, and 
characterization
    Investments in these areas will provide foundational support for 
U.S. leadership in key technology growth areas, including the 
following:

 Memory and Reconfigurable Systems
 Machine Learning and Artificial Intelligence
 Edge Computing, Sensors, and the Internet of Things
 Power Electronics, the Electricity Grid, and Cyber Physical 
Systems
 Energy Efficiency of Computation and Packaging

    Request for Information: The objective of this request for 
information is to gather input about the topical areas, organization, 
impact, and potential collaborations including public-private 
partnerships that could be implemented under this initiative. The 
participating program offices of DOE-SC are specifically interested in 
receiving input pertaining to any of the following questions:
    (1) Topical Areas and Scope: Are the topics identified above 
appropriate? Do DOE-SC expertise and capabilities in these areas offer 
unique opportunities? Are there other topical areas that DOE-SC should 
consider including?
    (2) Collaboration, Partnerships, and R&D Performers: What 
partnership and collaboration models would be most effective in 
furthering microelectronics R&D in the U.S.? What mechanisms should be 
used to foster innovation? What types of organizations and institutions 
should be involved? What are the optimal roles for industry and 
particularly public-private partnerships in such work? What approaches 
or concerns with respect to intellectual property rights should be 
considered?
    (3) National Impact and Unique DOE Role and Contribution: How can 
DOE-SC contribute to advancement of the field in ways that are not 
possible with other existing or envisioned programs (supported by DOE, 
other Federal agencies, or non-Federal sources)? How can this 
initiative effectively complement and expand upon existing research 
programs and facilities supported by ASCR, BES, HEP, and FES?
    (4) Program Planning and Evaluation: What strategic planning inputs 
and processes might maximize the impact of the DOE-SC investments in 
microelectronics? How can DOE-SC best review progress and coordinate 
with other federal agencies funding microelectronics R&D?
    (5) Other: What key obstacles, impediments, or bottlenecks to 
progress should be considered? Are there other factors, issues, or 
opportunities, not addressed by the questions above, which should be 
considered in the establishment of a DOE-SC microelectronics R&D 
initiative?
    The proposed initiative will focus on long-term fundamental R&D and 
therefore DOE is not interested in receiving input related to near-term 
incremental improvements to current state-of-the-art commercial CMOS 
technology nodes. DOE is also not interested in feedback on work that 
is primarily supported by other U.S. government agencies, such as Fabs 
and Trusted Microelectronics.
    DOE-SC is not announcing an intention or an interest in procuring 
goods and services for its use. This RFI makes no statement about the 
possibility that DOE-SC might issue one or more solicitations for 
either procurement or financial assistance activities in the future. 
DOE-SC seeks input about how best to create a public benefit through 
fostering revolutionary advances in the state of the art in this field.
    Comments containing references, studies, research, and other 
empirical data that are not widely published should include copies of 
the referenced materials. Note that comments will be made publicly 
available as submitted. Any information that may be confidential and 
exempt by law from public disclosure should be submitted as described 
below.
    Confidential Business Information: Pursuant to 10 CFR 1004.11, any 
person submitting information he or she believes to be confidential and 
exempt by law from public disclosure should submit via email: One copy 
of the document marked ``confidential'' including all the information 
believed to be confidential, and one copy of the document marked ``non-
confidential'' with the information believed to be confidential 
deleted. DOE will make its own determination about the confidential 
status of the information and treat it according to its determination. 
Factors of interest to DOE when evaluating requests to treat submitted 
information as confidential include: (1) A description of the items, 
(2) whether and why such items are customarily treated as confidential 
within the industry, (3) whether the information is generally known by 
or available from other sources, (4) whether the information has 
previously been made available to others without obligation concerning 
confidentiality, (5) an explanation of the competitive injury to the 
submitting person which would result from public disclosure, (6)

[[Page 33250]]

when such information might lose its confidential character due to the 
passage of time, and (7) why disclosure of the information would be 
contrary to the public interest.

    Signed in Washington, DC, on July 3, 2019.
Chris Fall,
Director, Office of Science.
[FR Doc. 2019-14869 Filed 7-11-19; 8:45 am]
 BILLING CODE 6450-01-P