Notice of intent to grant exclusive license, 65751 [2011-27464]

Download as PDF Federal Register / Vol. 76, No. 205 / Monday, October 24, 2011 / Notices Ms. Susan M. Burch, Advisory Committee Management Division, Office of International and Interagency Relations, (202) 358–0550, National Aeronautics and Space Administration, Washington, DC 20546–0001. FOR FURTHER INFORMATION CONTACT: October 18, 2011. P. Diane Rausch, Advisory Committee Management Officer, National Aeronautics and Space Administration. [FR Doc. 2011–27407 Filed 10–21–11; 8:45 am] BILLING CODE 7510–13–P NATIONAL AERONAUTICS AND SPACE ADMINISTRATION the public for inspection and, to the extent permitted by law, will not be released under the Freedom of Information Act, 5 U.S.C. 552. ADDRESSES: Objections relating to the prospective license may be submitted to Mr. James J. McGroary, Chief Patent Counsel/LS01, Marshall Space Flight Center, Huntsville, AL 35812, (256) 544–0013. FOR FURTHER INFORMATION CONTACT: Sammy A. Nabors, Technology Transfer Office/ED10, Marshall Space Flight Center, Huntsville, AL 35812, (256) 544–5226. Information about other NASA inventions available for licensing can be found online at https:// technology.nasa.gov. Dated: October 18, 2011. Richard W. Sherman, Deputy General Counsel. [Notice 11–102] Notice of intent to grant exclusive license [FR Doc. 2011–27465 Filed 10–21–11; 8:45 am] National Aeronautics and Space Administration. ACTION: Notice of intent to grant exclusive license. BILLING CODE 7510–13–P This notice is issued in accordance with 35 U.S.C. 209(e) and 37 CFR 404.7(a)(1)(i). NASA hereby gives notice of its intent to grant an exclusive license in the United States to practice the invention described and claimed in MFS–32870–1 ‘‘Greener ElectroMechanical Slide Valve’’ to QM Power, Inc, having its principal place of business in Lee’s Summit, MO. The intellectual property rights in this invention have been assigned to the United States of America as represented by the Administrator of the National Aeronautics and Space Administration. The prospective exclusive license will comply with the terms and conditions of 35 U.S.C. 209 and 37 CFR 404.7. NASA has not yet made a determination to grant the requested license and may deny the requested license even if no objections are submitted within the comment period. DATES: The prospective exclusive license may be granted unless, within fifteen (15) days from the date of this published notice, NASA receives written objections including evidence and argument that establish that the grant of the license would not be consistent with the requirements of 35 U.S.C. 209 and 37 CFR 404.7. Competing applications completed and received by NASA within fifteen (15) days of the date of this published notice will also be treated as objections to the grant of the contemplated exclusive license. Objections submitted in response to this notice will not be made available to [Notice (11–103)] AGENCY: tkelley on DSK3SPTVN1PROD with NOTICES SUMMARY: VerDate Mar<15>2010 15:34 Oct 21, 2011 Jkt 226001 NATIONAL AERONAUTICS AND SPACE ADMINISTRATION Notice of intent to grant exclusive license National Aeronautics and Space Administration. ACTION: Notice of intent to grant exclusive license. AGENCY: This notice is issued in accordance with 35 U.S.C. 209(e) and 37 CFR 404.7(a)(1)(i). NASA hereby gives notice of its intent to grant an exclusive license in the United States to practice the inventions described and claimed in U.S. Patent No. 7,341,883 B2 entitled ‘‘Silicon Germanium Semiconductive Alloy and Method of Fabricating Same,’’ U.S. Patent No. 7,514,726 B2 entitled ‘‘Graded Index Silicon Germanium on Lattice Matched Silicon Germanium Semiconductive Alloy,’’ U.S. Patent No. 7,558,371 B2 entitled ‘‘Method of Generating X–Ray Diffraction Data for Integral Detection of Twin Defects in Super-Hetero-Epitaxial Materials,’’ U.S. Patent No. 7,906,358 B2 entitled ‘‘Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal,’’ U.S. Patent Application No. 12/254,134 entitled ‘‘Hybrid Bandgap Engineering for Super-Hetero-Epitaxial Semiconductor Materials, and Products Thereof,’’ U.S. Patent Application No. 12/288,379 entitled ‘‘Rhombohedral Cubic Semiconductor Materials on Trigonal Substrate with Single Crystal Properties and Devices Based on Such Materials,’’ U.S. Patent No. 7,769,135 B2 SUMMARY: PO 00000 Frm 00071 Fmt 4703 Sfmt 9990 65751 entitled ‘‘X-ray Diffraction Wafer Mapping Method for Rhombohedral Super-Hetero-Epitaxy; and U.S. Patent Application No. 12/254,016 entitled ‘‘Thermoelectric Materials and Devices,’’ to innoEpi Incorporated having its principal place of business in Santa Clara, California. The patent rights in these inventions have been assigned to the United States of America as represented by the Administrator of the National Aeronautics and Space Administration. The prospective exclusive license will comply with the terms and conditions of 35 U.S.C. 209 and 37 CFR 404.7. The prospective exclusive license may be granted unless, within fifteen (15) days from the date of this published notice, NASA receives written objections including evidence and argument that establish that the grant of the license would not be consistent with the requirements of 35 U.S.C. 209 and 37 CFR 404.7. Competing applications completed and received by NASA within fifteen (15) days of the date of this published notice will also be treated as objections to the grant of the contemplated partially exclusive license. Objections submitted in response to this notice will not be made available to the public for inspection and, to the extent permitted by law, will not be released under the Freedom of Information Act, 5 U.S.C. 552. DATES: Objections relating to the prospective license may be submitted to Patent Attorney, Office of Chief Counsel, NASA Langley Research Center, MS 30, Hampton, VA 23681; (757) 864–5057 (phone), (757) 864–9190 (fax). ADDRESSES: FOR FURTHER INFORMATION CONTACT: Thomas K. McBride Jr., Patent Attorney, Office of Chief Counsel, NASA Langley Research Center, MS 30, Hampton, VA 23681; (757) 864–5057; Fax: (757) 864– 9190. Information about other NASA inventions available for licensing can be found online at https:// technology.nasa.gov. Dated: October 18, 2011. Richard W. Sherman, Deputy General Counsel. [FR Doc. 2011–27464 Filed 10–21–11; 8:45 am] BILLING CODE 7510–13–P E:\FR\FM\24OCN1.SGM 24OCN1

Agencies

National Aeronautics and Space Administration

[Federal Register Volume 76, Number 205 (Monday, October 24, 2011)]
[Notices]
[Page 65751]
From the Federal Register Online via the Government Printing Office [www.gpo.gov]
[FR Doc No: 2011-27464]


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NATIONAL AERONAUTICS AND SPACE ADMINISTRATION

[Notice (11-103)]


Notice of intent to grant exclusive license

AGENCY: National Aeronautics and Space Administration.

ACTION: Notice of intent to grant exclusive license.

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SUMMARY: This notice is issued in accordance with 35 U.S.C. 209(e) and 
37 CFR 404.7(a)(1)(i). NASA hereby gives notice of its intent to grant 
an exclusive license in the United States to practice the inventions 
described and claimed in U.S. Patent No. 7,341,883 B2 entitled 
``Silicon Germanium Semiconductive Alloy and Method of Fabricating 
Same,'' U.S. Patent No. 7,514,726 B2 entitled ``Graded Index Silicon 
Germanium on Lattice Matched Silicon Germanium Semiconductive Alloy,'' 
U.S. Patent No. 7,558,371 B2 entitled ``Method of Generating X-Ray 
Diffraction Data for Integral Detection of Twin Defects in Super-
Hetero-Epitaxial Materials,'' U.S. Patent No. 7,906,358 B2 entitled 
``Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal 
Plane of Trigonal or Hexagonal Crystal,'' U.S. Patent Application No. 
12/254,134 entitled ``Hybrid Bandgap Engineering for Super-Hetero-
Epitaxial Semiconductor Materials, and Products Thereof,'' U.S. Patent 
Application No. 12/288,379 entitled ``Rhombohedral Cubic Semiconductor 
Materials on Trigonal Substrate with Single Crystal Properties and 
Devices Based on Such Materials,'' U.S. Patent No. 7,769,135 B2 
entitled ``X-ray Diffraction Wafer Mapping Method for Rhombohedral 
Super-Hetero-Epitaxy; and U.S. Patent Application No. 12/254,016 
entitled ``Thermoelectric Materials and Devices,'' to innoEpi 
Incorporated having its principal place of business in Santa Clara, 
California. The patent rights in these inventions have been assigned to 
the United States of America as represented by the Administrator of the 
National Aeronautics and Space Administration. The prospective 
exclusive license will comply with the terms and conditions of 35 
U.S.C. 209 and 37 CFR 404.7.

DATES: The prospective exclusive license may be granted unless, within 
fifteen (15) days from the date of this published notice, NASA receives 
written objections including evidence and argument that establish that 
the grant of the license would not be consistent with the requirements 
of 35 U.S.C. 209 and 37 CFR 404.7. Competing applications completed and 
received by NASA within fifteen (15) days of the date of this published 
notice will also be treated as objections to the grant of the 
contemplated partially exclusive license.
    Objections submitted in response to this notice will not be made 
available to the public for inspection and, to the extent permitted by 
law, will not be released under the Freedom of Information Act, 5 
U.S.C. 552.

ADDRESSES: Objections relating to the prospective license may be 
submitted to Patent Attorney, Office of Chief Counsel, NASA Langley 
Research Center, MS 30, Hampton, VA 23681; (757) 864-5057 (phone), 
(757) 864-9190 (fax).

FOR FURTHER INFORMATION CONTACT: Thomas K. McBride Jr., Patent 
Attorney, Office of Chief Counsel, NASA Langley Research Center, MS 30, 
Hampton, VA 23681; (757) 864-5057; Fax: (757) 864-9190. Information 
about other NASA inventions available for licensing can be found online 
at https://technology.nasa.gov.

    Dated: October 18, 2011.
Richard W. Sherman,
Deputy General Counsel.
[FR Doc. 2011-27464 Filed 10-21-11; 8:45 am]
BILLING CODE 7510-13-P

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