Jointly Owned Invention Available for Licensing, 70511 [E6-20582]

Download as PDF Federal Register / Vol. 71, No. 233 / Tuesday, December 5, 2006 / Notices of an APO is a violation which is subject to sanction. We are issuing and publishing the results and notice in accordance with sections 751(c), 752(c), and 777(i)(1) of the Act. Dated: November 29, 2006. Joseph A. Spetrini, Acting Assistant Secretary for Import Administration. [FR Doc. E6–20549 Filed 12–4–06; 8:45 am] BILLING CODE 3510–DS–S DEPARTMENT OF COMMERCE National Institute of Standards and Technology Jointly Owned Invention Available for Licensing National Institute of Standards and Technology, Commerce ACTION: Notice. AGENCY: The invention listed below is jointly owned by the U.S. Government, as represented by the Department of Commerce, and Cree Inc. The Department of Commerce’s interest in the invention is available for licensing, in accordance with 35 U.S.C. 207 and 37 CFR part 404 to achieve expeditious commercialization of results of federally funded research and development. FOR FURTHER INFORMATION CONTACT: Technical and licensing information on this invention may be obtained by writing to: National Institute of Standards and Technology, Office of Technology Partnerships, Attn: Mary Clague, Building 222, Room A155, Gaithersburg, MD 20899. Information is also available via telephone: 301–975– 4188, fax 301–869–2751, or e-mail: mary.clague@nist.gov. Any request for information should include the NIST Docket number or Patent number and title for the invention as indicated below. The invention available for licensing is: SUMMARY: ycherry on PROD1PC64 with NOTICES [DOCKET NUMBER 06–008US] Title: Power Switching Semiconductor Devices Including Rectifying Junction-Shunts. Abstract: A semiconductor device includes a drift layer having a first conductivity type and a body region adjacent the drift layer. The body region has a second conductivity type opposite the first conductivity type and forms a p-n junction with the drift layer. The device further includes a contactor region in the body region and having the first conductivity type, and a shunt channel region extending through the body region from the contactor region to VerDate Aug<31>2005 15:14 Dec 04, 2006 Jkt 211001 the drift layer. The shunt channel region has the first conductivity type. The device further includes a first terminal in electrical contact with the body region and the contactor region, and a second terminal in electrical contact with the drift layer. The shunt channel region has a length, thickness and doping concentration selected that: (1) The shunt channel region is fully depleted when zero voltage is applied across the first and second terminals, (2) the shunt channel becomes conductive at voltages less than the built-in potential of the drift layer to body region p-n junction, and/or (3) the shunt channel is not conductive for voltages that reverse biase the p–n junction between the drift region and the body region. Dated: November 29, 2006. James E. Hill, Acting Deputy Director. [FR Doc. E6–20582 Filed 12–4–06; 8:45 am] BILLING CODE 3510–13–P DEPARTMENT OF COMMERCE National Oceanic and Atmospheric Administration Proposed Information Collection; Comment Request; Fisheries Certificate of Origin National Oceanic and Atmospheric Administration (NOAA). ACTION: Notice. AGENCY: SUMMARY: The Department of Commerce, as part of its continuing effort to reduce paperwork and respondent burden, invites the general public and other Federal agencies to take this opportunity to comment on proposed and/or continuing information collections, as required by the Paperwork Reduction Act of 1995. DATES: Written comments must be submitted on or before February 5, 2007. ADDRESSES: Direct all written comments to Diana Hynek, Departmental Paperwork Clearance Officer, Department of Commerce, Room 6625, 14th and Constitution Avenue, NW., Washington, DC 20230 (or via the Internet at dHynek@doc.gov). FOR FURTHER INFORMATION CONTACT: Requests for additional information or copies of the information collection instrument and instructions should be directed to William G. Jacobson, 562– 980–4035 or Bill.Jacobson@noaa.gov. SUPPLEMENTARY INFORMATION: I. Abstract The information required by the International Dolphin Conservation PO 00000 Frm 00011 Fmt 4703 Sfmt 4703 70511 Program Act, amendment to the Marine Mammal Protection Act, is needed: To document the dolphin-safe status of tuna import shipments; to verify that import shipments of fish were not harvested by large scale, high seas driftnets; and to verify that imported tuna was not harvested by an embargoed nation or one that is otherwise prohibited from exporting tuna to the United States. Forms are submitted by importers and processors. II. Method of Collection Forms may be submitted by mail or electronically. III. Data OMB Number: 0648–0335. Form Number: NOAA Form 370. Type of Review: Regular submission. Affected Public: Business or other forprofits organizations. Estimated Number of Respondents: 350. Estimated Time Per Response: 20 minutes. Estimated Total Annual Burden Hours: 3,663. Estimated Total Annual Cost to Public: $3,397. IV. Request for Comments Comments are invited on: (a) Whether the proposed collection of information is necessary for the proper performance of the functions of the agency, including whether the information shall have practical utility; (b) the accuracy of the agency’s estimate of the burden (including hours and cost) of the proposed collection of information; (c) ways to enhance the quality, utility, and clarity of the information to be collected; and (d) ways to minimize the burden of the collection of information on respondents, including through the use of automated collection techniques or other forms of information technology. Comments submitted in response to this notice will be summarized and/or included in the request for OMB approval of this information collection; they also will become a matter of public record. Dated: November 30, 2006. Gwellnar Banks, Management Analyst, Office of the Chief Information Officer. [FR Doc. E6–20513 Filed 12–4–06; 8:45 am] BILLING CODE 3510–22–P E:\FR\FM\05DEN1.SGM 05DEN1

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[Federal Register Volume 71, Number 233 (Tuesday, December 5, 2006)]
[Notices]
[Page 70511]
From the Federal Register Online via the Government Printing Office [www.gpo.gov]
[FR Doc No: E6-20582]


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DEPARTMENT OF COMMERCE

National Institute of Standards and Technology


Jointly Owned Invention Available for Licensing

AGENCY: National Institute of Standards and Technology, Commerce

ACTION: Notice.

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SUMMARY: The invention listed below is jointly owned by the U.S. 
Government, as represented by the Department of Commerce, and Cree Inc. 
The Department of Commerce's interest in the invention is available for 
licensing, in accordance with 35 U.S.C. 207 and 37 CFR part 404 to 
achieve expeditious commercialization of results of federally funded 
research and development.

FOR FURTHER INFORMATION CONTACT: Technical and licensing information on 
this invention may be obtained by writing to: National Institute of 
Standards and Technology, Office of Technology Partnerships, Attn: Mary 
Clague, Building 222, Room A155, Gaithersburg, MD 20899. Information is 
also available via telephone: 301-975-4188, fax 301-869-2751, or e-
mail: mary.clague@nist.gov. Any request for information should include 
the NIST Docket number or Patent number and title for the invention as 
indicated below.
    The invention available for licensing is:

[DOCKET NUMBER 06-008US]

    Title: Power Switching Semiconductor Devices Including Rectifying 
Junction-Shunts.
    Abstract: A semiconductor device includes a drift layer having a 
first conductivity type and a body region adjacent the drift layer. The 
body region has a second conductivity type opposite the first 
conductivity type and forms a p-n junction with the drift layer. The 
device further includes a contactor region in the body region and 
having the first conductivity type, and a shunt channel region 
extending through the body region from the contactor region to the 
drift layer. The shunt channel region has the first conductivity type. 
The device further includes a first terminal in electrical contact with 
the body region and the contactor region, and a second terminal in 
electrical contact with the drift layer. The shunt channel region has a 
length, thickness and doping concentration selected that: (1) The shunt 
channel region is fully depleted when zero voltage is applied across 
the first and second terminals, (2) the shunt channel becomes 
conductive at voltages less than the built-in potential of the drift 
layer to body region p-n junction, and/or (3) the shunt channel is not 
conductive for voltages that reverse biase the p-n junction between the 
drift region and the body region.

    Dated: November 29, 2006.
James E. Hill,
Acting Deputy Director.
 [FR Doc. E6-20582 Filed 12-4-06; 8:45 am]
BILLING CODE 3510-13-P

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